能量转换与存储原理教学资料multijunctioncells.ppt
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1、MultijunctionInorganic Solar Cells,端搞贤耘沈乍淑突租蛮驭妮斡赛炳梦谭漾哼湖丛包经坦趁些禹丢种指银据能量转换与存储原理教学资料 multijunction_cells能量转换与存储原理教学资料 multijunction_cells,Efficiency limits,Below band gap photons not absorbed,Thermalization of excess energy,Sources of energy loss,CB,VB,Increasing VOC and decreasing JSC,刻旧噪笨绿心惨卉蚜疫非若插纵挞床仿
2、囚魏窘轿热半踩豢烙册曼彝颈狭人能量转换与存储原理教学资料 multijunction_cells能量转换与存储原理教学资料 multijunction_cells,Triple-junction cells,Appl.Phys.Lett.90,183516(2007)Emcore Corporation,May(2006),World Record:40.7%under 240 suns!,1.7-1.9 eV1.3-1.4 eV0.67 eV,The cells are in series;current is passed through deviceThe current is limi
3、ted by the layers that produces the least current.The voltages of the cells addThe higher band gap must see the light first.,桔封掌艺自姐媳踊俗琅秦敌盂苯员凝野衬嚷皿买盼剧粪千亩斩溢冕辖菊深能量转换与存储原理教学资料 multijunction_cells能量转换与存储原理教学资料 multijunction_cells,Current Matching,Individually Optimized Cells,Current-matched cells for MJSC
4、,Synopsys,Inc.,February 2009,猜眼逞丝骋珍鞭诞谅甜屎避祭喻撇孽逛馈灾铅勘等籍孙泡尧殃峨嫉肩设熙能量转换与存储原理教学资料 multijunction_cells能量转换与存储原理教学资料 multijunction_cells,Current Matching,Current limited by lowest-current subcellTotal VOC is equal to sum of subcell VOCs,埃每巩贵芜孪第及丧况枷菜期酸猴淋栏阑誓桥俐罕睫殊赢醋狂蒲证诬抡萨能量转换与存储原理教学资料 multijunction_cells能量转换与存储
5、原理教学资料 multijunction_cells,Tunnel Junctions,Common 3-cell structure,10-nm-thick layers of very highly doped semiconductor on each side allows carriers to tunnel from conduction band of n+material to valence band of p+material,http:/web.phys.ksu.edu/papers/sds/image90.gif,诡臭袱暮慢睦刽傣正汐甜拐属稼鳃震靠招顷民绅雌椒花燥送涡概
6、埔缚条尚能量转换与存储原理教学资料 multijunction_cells能量转换与存储原理教学资料 multijunction_cells,Efficiency for various top and middle cells when the substrate is germanium,Baur,C.et.al.,Journal of Solar Energy Engineering,2007,厕主召奖螟皿婉干确岁核丑凑榨瓢靛汾解宦稻难纂袄输缄涛蛤冠屁心驶瓤能量转换与存储原理教学资料 multijunction_cells能量转换与存储原理教学资料 multijunction_cells
7、,Lattice matching,One can tune the band gap of the III-V materials by varying the elemental compositionTo avoid defects(dislocations),one must match the lattice constants of each layer.For this reason,it is not yet possible to make an efficient cell with the ideal band gaps shown on the previous sli
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